N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 18.1 A RDS(ON)

文件：1.43596 Mbytes 页数：4 Pages

BYCHIP

百域芯

10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.160Ω, VGS = 10V - rDS(ON) = 0.165Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.Intersil.com • Peak Current vs Pulse Width Curve

文件：336.55 Kbytes 页数：9 Pages

INTERSIL

10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.160Ω, VGS = 10V - rDS(ON) = 0.165Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.Fairchildsemi.com • Peak Current vs Pulse Width C

文件：220.06 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

100 VN-Channel MOSFET

Features • Ultra Low On-Resistance • Simulation Models • Temperature Compensated PSPICE® and SABER™ • Electrical Models • Spice and SABER Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves • VDS=100V • RDS(ON) (at VGS=10V)

文件：440.78 Kbytes 页数：7 Pages

UMW

友台半导体