64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.014Ω, VGS = 10V - rDS(ON) = 0.017Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width C

文件：217.32 Kbytes 页数：10 Pages

FAIRCHILD

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64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.014Ω, VGS = 10V - rDS(ON) = 0.017Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.Intersil.com • Peak Current vs Pulse Width Curve

文件：108.46 Kbytes 页数：9 Pages

INTERSIL

64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

• Ultra Low On-Resistance\n   - rDS(ON) = 0.014Ω, VGS = 10V\n   - rDS(ON) = 0.017Ω, VGS = 5V\n• Simulation Models\n   - Temperature Compensated PSPICE® and SABER© Electrical Models\n   - Spice and SABER© Thermal Impedance Models\n   - www.Intersil.com\n• Peak Current vs Pulse Width Curve\n• UIS Rati;

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瑞萨

64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

ONSEMI

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