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HUFA75321D3S

20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件:226.21 Kbytes 页数:10 Pages

FAIRCHILD

仙童半导体

HUFA75321D3ST

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 30A RDS(ON)

文件:905.1 Kbytes 页数:4 Pages

BYCHIP

百域芯

HUFA75321D3S

55 V、20 A、30 mΩ、D2PAKN 沟道 UltraFET®

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the 20 A、55 V\n 仿真模型\n 峰值电流与脉宽曲线\n 相关文献\n UIS 额定值曲线\n TB334,“PC板焊接表面贴装元件的指南”\nQualified to AEC Q101;

ONSEMI

安森美半导体

HUF75321D3

20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件:226.3 Kbytes 页数:10 Pages

FAIRCHILD

仙童半导体

HUF75321D3

20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件:129.52 Kbytes 页数:9 Pages

INTERSIL

HUF75321D3S

20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件:226.3 Kbytes 页数:10 Pages

FAIRCHILD

仙童半导体

技术参数

  • Compliance:

    AEC QualifiedPPAP CapablePb-free

  • Status:

     Active  

  • Description:

     N-Channel UltraFET® Power MOSFET 55V

  • Channel Polarity:

    N-Channel

  • Configuration:

    Single

  • V(BR)DSS Min (V):

    55

  • VGS Max (V):

    ±20

  • VGS(th) Max (V):

    4

  • ID Max (A):

    20

  • PD Max (W):

    93

  • RDS(on) Max @ VGS = 10 V(mΩ):

    36

  • Qg Typ @ VGS = 10 V (nC):

    21

  • Ciss Typ (pF):

    680

  • Package Type:

    DPAK-3 / TO-252-3

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
17+
TO-252(DPAK)
31518
原装正品 可含税交易
询价
onsemi
25+
TO-252AA
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
FAIRCHILD
24+
TO-252(DPAK)
8866
询价
FAIRCHILD
05+
原厂原装
7719
只做全新原装真实现货供应
询价
FAIRCHIL
25+
TO-252
90000
一级代理商进口原装现货、价格合理
询价
HARRIS
23+
TO252
65480
询价
ON Semiconductor
21+
TO-252AA
1800
进口原装!长期供应!绝对优势价格(诚信经营)!!
询价
FAIRCHILDRCHILD
2447
SOT252
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
FAIRCHILD/仙童
23+
TO-2523L(DPAK)
50000
全新原装正品现货,支持订货
询价
FAIRCHILD
23+
TO252
50000
全新原装正品现货,支持订货
询价
更多HUFA75321D3S供应商 更新时间2026-2-1 14:00:00