首页 >HUFA75321D3S>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HUFA75321D3S | 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th 文件:226.21 Kbytes 页数:10 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD | |
N-channel Enhancement Mode Power MOSFET Features VDS= 60V, ID= 30A RDS(ON) 文件:905.1 Kbytes 页数:4 Pages | BYCHIP 百域芯 | BYCHIP | ||
HUFA75321D3S | 55 V、20 A、30 mΩ、D2PAKN 沟道 UltraFET® These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the 20 A、55 V\n 仿真模型\n 峰值电流与脉宽曲线\n 相关文献\n UIS 额定值曲线\n TB334,“PC板焊接表面贴装元件的指南”\nQualified to AEC Q101; | ONSEMI 安森美半导体 | ONSEMI | |
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th 文件:226.3 Kbytes 页数:10 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD | ||
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th 文件:129.52 Kbytes 页数:9 Pages | INTERSIL | INTERSIL | ||
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th 文件:226.3 Kbytes 页数:10 Pages | FAIRCHILD 仙童半导体 | FAIRCHILD |
技术参数
- Compliance:
AEC QualifiedPPAP CapablePb-free
- Status:
Active
- Description:
N-Channel UltraFET® Power MOSFET 55V
- Channel Polarity:
N-Channel
- Configuration:
Single
- V(BR)DSS Min (V):
55
- VGS Max (V):
±20
- VGS(th) Max (V):
4
- ID Max (A):
20
- PD Max (W):
93
- RDS(on) Max @ VGS = 10 V(mΩ):
36
- Qg Typ @ VGS = 10 V (nC):
21
- Ciss Typ (pF):
680
- Package Type:
DPAK-3 / TO-252-3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
17+ |
TO-252(DPAK) |
31518 |
原装正品 可含税交易 |
询价 | ||
onsemi |
25+ |
TO-252AA |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
FAIRCHILD |
24+ |
TO-252(DPAK) |
8866 |
询价 | |||
FAIRCHILD |
05+ |
原厂原装 |
7719 |
只做全新原装真实现货供应 |
询价 | ||
FAIRCHIL |
25+ |
TO-252 |
90000 |
一级代理商进口原装现货、价格合理 |
询价 | ||
HARRIS |
23+ |
TO252 |
65480 |
询价 | |||
ON Semiconductor |
21+ |
TO-252AA |
1800 |
进口原装!长期供应!绝对优势价格(诚信经营)!! |
询价 | ||
FAIRCHILDRCHILD |
2447 |
SOT252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
FAIRCHILD/仙童 |
23+ |
TO-2523L(DPAK) |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
FAIRCHILD |
23+ |
TO252 |
50000 |
全新原装正品现货,支持订货 |
询价 |
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