10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.160Ω, VGS = 10V - rDS(ON) = 0.165Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.Fairchildsemi.com • Peak Current vs Pulse Width C

文件：220.06 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.160Ω, VGS = 10V - rDS(ON) = 0.165Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.Intersil.com • Peak Current vs Pulse Width Curve

文件：336.55 Kbytes 页数：9 Pages

INTERSIL

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 18.1 A RDS(ON)

文件：1.49123 Mbytes 页数：4 Pages

BYCHIP

百域芯

N 沟道，逻辑电平，UltraFET 功率 MOSFET，100V，10A，165mΩ

N-Channel Logic Level UltraFET Power MOSFET 100 V, 10 A, 165 mΩ •超低导通电阻\n•仿真模型\n•峰值电流与脉宽曲线\n•UIS 额定值曲线\n•开关时间与RGS曲线;

ONSEMI

安森美半导体