38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.035Ω, VGS = 10V - rDS(ON) = 0.036Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.Intersil.com • Peak Current vs Pulse Width

文件：337.87 Kbytes 页数：9 Pages

INTERSIL

38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.035Ω, VGS = 10V - rDS(ON) = 0.036Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.Fairchildsemi.com • Peak Current vs Pulse Wi

文件：218.32 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

N-Channel 100-V (D-S) MOSFET

文件：986.08 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

ONSEMI

安森美半导体

38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET짰 Power MOSFET

文件：375.61 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

N 沟道，逻辑电平，UltraFET 功率 MOSFET，100V，38A，36mΩ

N-Channel Logic Level UltraFET® Power MOSFET 100 V, 38 A, 36 mΩ 超低导通电阻- rDS(ON)typ = 0.029 Ω、VGS = 10 V- rDS(ON)max = 0.035 Ω、VGS = 10 V\n 仿真模型- 温度补偿式PSPICE®和SABER™ 电气模型- SPICE 和 SABER 热阻抗模型- www.fairchildsemi.com\n 峰值电流与脉宽曲线\n UIS额定值曲线\n 开关时间与 RGS 曲线\n 符合 AEC Q101\n 符合 RoHS 标准;

ONSEMI

安森美半导体