18A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.085Ω, VGS = 10V - rDS(ON) = 0.087Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.Fairchildsemi.com • Peak Current vs Pulse Wi

文件：215.28 Kbytes 页数：10 Pages

Fairchild

仙童半导体

18A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.085Ω, VGS = 10V - rDS(ON) = 0.087Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.semi.Intersil.com • Peak Current vs Pulse W

文件：108.89 Kbytes 页数：9 Pages

Intersil

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 18.1 A RDS(ON)

文件：1.43593 Mbytes 页数：4 Pages

Bychip

百域芯

18A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

文件：215.55 Kbytes 页数：10 Pages

Fairchild

仙童半导体

18A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

文件：215.55 Kbytes 页数：10 Pages

Fairchild

仙童半导体

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 18.1 A RDS(ON)

文件：1.49126 Mbytes 页数：4 Pages

Bychip

百域芯