19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

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FAIRCHILD

仙童半导体

19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：102.63 Kbytes 页数：9 Pages

INTERSIL

MOSFET N-CH 55V 19A TO-220AB

ONSEMI

安森美半导体

19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：217.28 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体