N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 30A RDS(ON)

文件：905.02 Kbytes 页数：4 Pages

BYCHIP

百域芯

20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：836.45 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

N-Channel 6 0-V (D-S) MOSFET

文件：988.87 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：226.21 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：226.21 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 30A RDS(ON)

文件：905.1 Kbytes 页数：4 Pages

BYCHIP

百域芯