75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs

75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is cap

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FAIRCHILD

仙童半导体

75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs

75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capab

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INTERSIL

75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs

75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs\n\nThese N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable o • 75A, 55V\n• Simulation Models\n- Temperature Compensated PSPICE® and SABER™ Models\n- SPICE and SABER Thermal Impedance Models Available on the WEB at: www.fairchildsemi.com\n• Peak Current vs Pulse Width Curve\n• UIS Rating Curve\n• Related Literature\n- TB334, “Guidelines for Soldering Surface M;

ONSEMI

安森美半导体

Isc N-Channel MOSFET Transistor

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ISC

无锡固电

75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs

75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capab

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FAIRCHILD

仙童半导体