HUF75329D3ST数据手册供应代理百域芯BYCHIP-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
HUF75329D3ST	文件：763.3 Kbytes Page：4 Pages	N-channel Enhancement Mode Power MOSFET Features  VDS= 60V, ID= 30A RDS(ON) 文件：763.3 Kbytes 页数：4 Pages	BYCHIP 百域芯	BYCHIP
HUF75329D3ST	文件：665.88 Kbytes Page：11 Pages	丝印：75329D；Package：TO-252AA；N-Channel UltraFET Power MOSFET 55 V, 20 A, 26 m廓文件：665.88 Kbytes 页数：11 Pages	ONSEMI 安森美半导体	ONSEMI
HUFA75329D3	文件：311.86 Kbytes Page：10 Pages	20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th 文件：311.86 Kbytes 页数：10 Pages	FAIRCHILD 仙童半导体	FAIRCHILD
HUFA75329D3S	文件：311.86 Kbytes Page：10 Pages	20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th 文件：311.86 Kbytes 页数：10 Pages	FAIRCHILD 仙童半导体	FAIRCHILD

更多HUF75329D3ST供应商更新时间2026-2-3 16:50:00