75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：286.18 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：100.12 Kbytes 页数：9 Pages

INTERSIL

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

• DESCRIPTION • Drain Current: ID= 75A@ TC=25℃ • Drain Source Voltage : VDSS= 55V(Min) • Fast Switching Speed • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Designed for high current, high speed switching, switch mode power supplies.

文件：266.35 Kbytes 页数：2 Pages

ISC

无锡固电

75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：286.18 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

丝印：75345S；Package：D2PAK-3；MOSFET ??Power, N-Channel, UltraFET 55 V, 75 A, 7 m

文件：603.64 Kbytes 页数：16 Pages

ONSEMI

安森美半导体

N 沟道 UltraFET Power MOSFET 55V，75A，7mΩ

这些 N 沟道功率 MOSFET 采用创新的 UltraFET 工艺制造。 这种先进工艺技术实现了单位硅面积内最低的通态电阻，可以带来出色的性能。 此器件能够在雪崩模式下承受高能量并且二极管具有极低的反向恢复时间和存储电荷。 设计用于电源效率很重要的应用，如开关稳压器、开关转换器、电机驱动器、继电器驱动器、低电压总线开关，以及便携式产品和电池供电产品中的电源管理。 •75A、55V\n•热阻 SPICE 和 SABER 模型请参考网站\n•温度补偿式 PSPICE®和 SABER™模型\n•峰值电流与脉宽曲线\n•UIS额定值曲线\n•相关文献;

ONSEMI

安森美半导体