66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

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66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

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66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs

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66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：234.73 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体