HUF75333G3中文资料仙童半导体数据手册PDF规格书

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching convertors, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.

特性 Features

• 66A, 55V

• Simulation Models

- Temperature Compensated PSPICE® and SABER™ Models

- SPICE and SABER Thermal Impedance Models Available on the WEB at: www.fairchildsemi.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Formerly developmental type TA75333