HAF中文资料下载原装现货霍尼韦尔第5页-114ic电子网

首页 >HAF>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
HAF2007-90STR	文件：95.12 Kbytes Page：9 Pages	Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o 文件：95.12 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
HAF2007L	文件：95.12 Kbytes Page：9 Pages	Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o 文件：95.12 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
HAF2007L	文件：42.9 Kbytes Page：6 Pages	Silicon N Channel MOS FET Series Power Switching This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumpt 文件：42.9 Kbytes 页数：6 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
HAF2007S	文件：42.9 Kbytes Page：6 Pages	Silicon N Channel MOS FET Series Power Switching This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumpt 文件：42.9 Kbytes 页数：6 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
HAF2007S	文件：95.12 Kbytes Page：9 Pages	Silicon N Channel MOSFET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o 文件：95.12 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
HAF2008	文件：24.94 Kbytes Page：6 Pages	SILICON N CHANNEL MOSFET SERIES POWER SWITCHING This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumpt 文件：24.94 Kbytes 页数：6 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
HAF2011	文件：34.67 Kbytes Page：6 Pages	Silicon N Channel MOS FET Series Power Switching Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over powe 文件：34.67 Kbytes 页数：6 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
HAF2011	文件：121.97 Kbytes Page：9 Pages	Silicon N Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over 文件：121.97 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
HAF2011L	文件：121.97 Kbytes Page：9 Pages	Silicon N Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over 文件：121.97 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
HAF2011L	文件：34.67 Kbytes Page：6 Pages	Silicon N Channel MOS FET Series Power Switching Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over powe 文件：34.67 Kbytes 页数：6 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI

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技术参数

输入电压：
80-430
输出功率：
1000W
功率范围：
300W-1KW
输出路数：
1
尺寸（mm）：
117.0*61.2*17.5
输出范围：
9-18V
安全符合：
符合
散热方式：
集成散热
输出电压1：
14VdcV/71.5;A
输出电压2：
V/A
输出电压3：
V/A
输出电压4：
V/A
输出电压5：
V/A

供应商	型号	品牌	批号	封装	库存	备注	价格
芯有半导体（深圳）有限公司	HAF4017BT	PHI	05+	原厂原装	5016	只做全新原装真实现货供应	询价
深圳市福安瓯科技有限公司	HAF3841CN96	N/A	25+	QFP	3000	强调现货,随时查询!	询价
深圳市弘为电子有限公司	HAF2007-91STL	RENESAS	24+	TO252	1068	原装现货假一罚十	询价
深圳市毅创腾电子科技有限公司	HAF1002	HIT	23+	TO263	7000	绝对全新原装!100%保质量特价!请放心订购!	询价
千层芯半导体(深圳)有限公司	HAFBSF0200C2AX3	Honeywell	24+	原厂原装	6000	进口原装正品假一赔十,货期7-10天	询价
深圳市欧立现代科技有限公司	HAF2007	HITACHI	24+	TO252	6980	原装现货,可开13%税票	询价
深圳市益百分电子有限公司	HAF2025-91STL-E	RENESAS	7		2600	全新原装进口自己库存优势	询价
深圳市勤思达科技有限公司	HAF2012		12+	TO-263	15000	全新原装,绝对正品,公司现货供应。	询价
齐创科技(上海,北京,青岛)有限公司	HAF2026RJ-EL-E	RENESAS	23+	SOP8	5000	原装正品,假一罚十	询价
深圳市卓越微芯电子有限公司	HAF2007-90STL	RENESAS	25+	TO-252	14955	百分百原装正品真实公司现货库存本公司只做原装可	询价

更多HAF供应商更新时间2026-4-17 16:28:00

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