Silicon N Channel MOS FET Series Power Switching

This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumpt

文件：42.9 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

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Silicon N Channel MOSFET Series Power Switching

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying o

文件：95.12 Kbytes 页数：9 Pages

RENESAS

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Intelligent Power Devices

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HDSL LINE TRANSFORMER

文件：292.94 Kbytes 页数：1 Pages

BOTHHAND

HDSL LINE TRANSFORMER

文件：282.05 Kbytes 页数：1 Pages

BOTHHAND

High Efficient Rectifiers

Features ◆ Low cost ◆ Diffused junction ◆ Ultra fast switching for high efficiency ◆ Low reverse leakage current ◆ Low forward voltage drop ◆ High current capability ◆ The plastic material carries UL recognition 94V-0 ◆ TJ is 150°C (Max.) and TSTG is 175°C (Max.) with PI glue

文件：152.7 Kbytes 页数：2 Pages

Good-Ark

固锝电子