HAF2011中文资料瑞萨数据手册PDF规格书
HAF2011规格书详情
Description
This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
• Logic level operation (4 to 6 V Gate drive)
• High endurance capability against to the short circuit
• Built-in the over temperature shut-down circuit
• Latch type shut-down operation (Need 0 voltage recovery)
产品属性
- 型号：
HAF2011
- 制造商：
HITACHI
- 制造商全称：
Hitachi Semiconductor
- 功能描述：
Silicon N Channel MOS FET Series Power Switching
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
1000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
RENESAS |
23+ |
SOT263/2.5 |
20000 |
全新原装假一赔十 |
询价 | ||
TO-263 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
询价 | ||
RENESAS/瑞萨 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
RENESAS/瑞萨 |
2023+ |
TO263 |
1000 |
专注全新正品,优势现货供应 |
询价 | ||
RENESAS/瑞萨 |
21+ |
TO-263 |
3804 |
原装现货假一赔十 |
询价 | ||
Renesas |
1822+ |
SOT-263 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
RENESAS/瑞萨 |
22+ |
SOT-263 |
20000 |
保证原装正品,假一陪十 |
询价 | ||
RENESAS/瑞萨 |
22+ |
TO263 |
8000 |
原装正品支持实单 |
询价 | ||
RENESAS/瑞萨 |
2223+ |
TO263 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
询价 |
