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HAF2011

Silicon N Channel MOS FET Series Power Switching

Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over powe

文件:34.67 Kbytes 页数:6 Pages

HITACHIHitachi Semiconductor

日立日立公司

HAF2011

Silicon N Channel MOS FET Series Power Switching

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over

文件:121.97 Kbytes 页数:9 Pages

RENESAS

瑞萨

HAF2011

Silicon N Channel MOS FET Series Power Switching

HITACHI

日立

HAF2011L

Silicon N Channel MOS FET Series Power Switching

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over

文件:121.97 Kbytes 页数:9 Pages

RENESAS

瑞萨

HAF2011L

Silicon N Channel MOS FET Series Power Switching

Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over powe

文件:34.67 Kbytes 页数:6 Pages

HITACHIHitachi Semiconductor

日立日立公司

HAF2011S

Silicon N Channel MOS FET Series Power Switching

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over

文件:121.97 Kbytes 页数:9 Pages

RENESAS

瑞萨

HAF2011S

Silicon N Channel MOS FET Series Power Switching

Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over powe

文件:34.67 Kbytes 页数:6 Pages

HITACHIHitachi Semiconductor

日立日立公司

HAF2011(L)_15

Silicon N Channel MOS FET Series Power Switching

文件:137 Kbytes 页数:11 Pages

RENESAS

瑞萨

HAF2011L

Silicon N Channel MOS FET Series Power Switching

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumptio • Logic level operation (4 to 6 V Gate drive)\n• Built-in the over temperature shut-down circuit\n• Latch type shut-down operation (Need 0 voltage recovery)\n;

Renesas

瑞萨

HAF2011S

Intelligent Power Devices

Renesas

瑞萨

详细参数

  • 型号:

    HAF2011

  • 制造商:

    HITACHI

  • 制造商全称:

    Hitachi Semiconductor

  • 功能描述:

    Silicon N Channel MOS FET Series Power Switching

供应商型号品牌批号封装库存备注价格
RENESAS瑞萨/HITACHI日立
24+
TO-263
7200
新进库存/原装
询价
RENESAS
11PB
SOT263/2.5
2600
全新原装进口自己库存优势
询价
RENESAS
17+
SOT263/2.5
9988
全新原装现货QQ:547425301手机17621633780杨小姐
询价
RENESAS
23+
TO263
8560
受权代理!全新原装现货特价热卖!
询价
TO-263
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
Renesas
18+
SOT-263
41200
原装正品,现货特价
询价
RENESAS/瑞萨
23+
TO263
50000
全新原装正品现货,支持订货
询价
RENESAS/瑞萨
22+
TO-263
6000
十年配单,只做原装
询价
RENESAS/瑞萨
23+
TO263
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
RENESAS/瑞萨
22+
TO263
8000
原装正品支持实单
询价
更多HAF2011供应商 更新时间2026-1-21 16:30:00