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HAF2011

Silicon N Channel MOS FET Series Power Switching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF2011

Silicon N Channel MOS FET Series Power Switching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HAF2011L

Silicon N Channel MOS FET Series Power Switching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HAF2011L

Silicon N Channel MOS FET Series Power Switching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF2011S

Silicon N Channel MOS FET Series Power Switching

Features ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingoverpowe

HitachiHitachi Semiconductor

日立日立公司

HAF2011S

Silicon N Channel MOS FET Series Power Switching

Description ThisFEThastheovertemperatureshut-downcapabilitysensingtothejunctiontemperature. ThisFEThasthebuilt-inovertemperatureshut-downcircuitinthegatearea.Andthiscircuitoperationtoshut-downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HAF2011(L)_15

Silicon N Channel MOS FET Series Power Switching

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

详细参数

  • 型号:

    HAF2011

  • 制造商:

    HITACHI

  • 制造商全称:

    Hitachi Semiconductor

  • 功能描述:

    Silicon N Channel MOS FET Series Power Switching

供应商型号品牌批号封装库存备注价格
RENESAS瑞萨/HITACHI日立
24+
TO-263
7200
新进库存/原装
询价
RENESAS
11PB
SOT263/2.5
2600
全新原装进口自己库存优势
询价
Renesas
23+
SOT-263
4000
专业优势供应
询价
RENESAS
17+
SOT263/2.5
9988
只做原装进口,自己库存
询价
RENESAS
23+
TO263
8560
受权代理!全新原装现货特价热卖!
询价
TO-263
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
Renesas
1822+
SOT-263
9852
只做原装正品假一赔十为客户做到零风险!!
询价
Renesas
18+
SOT-263
41200
原装正品,现货特价
询价
RENESAS/瑞萨
23+
TO263
50000
全新原装正品现货,支持订货
询价
RENESAS/瑞萨
22+
TO-263
6000
十年配单,只做原装
询价
更多HAF2011供应商 更新时间2025-7-24 16:30:00