SILICON N CHANNEL MOSFET SERIES POWER SWITCHING

This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumpt

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HitachiHitachi Semiconductor

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Thermal MOS FETs

HITACHI

日立

20.0 Ampere Heatsink Dual Common Anode High Efficiency Rectifiers

文件：622.56 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

20.0 Ampere Heatsink Dual Common Cathode High Efficiency Rectifiers

文件：622.38 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体

20.0 Ampere Heatsink Dual Common Anode High Efficiency Rectifiers

文件：260.22 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体