Silicon P Channel MOS FET Series Power Switching

This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumpt

文件：114.96 Kbytes 页数：11 Pages

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Silicon P Channel MOS FET Series Power Switching

Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over

文件：113.11 Kbytes 页数：10 Pages

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瑞萨

Silicon P Channel MOS FET Series Power Switching

Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over

文件：113.11 Kbytes 页数：10 Pages

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瑞萨

Silicon P Channel MOS FET Series Power Switching

Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over

文件：113.11 Kbytes 页数：10 Pages

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瑞萨

1008 to 1512W Power Factor Correction Module

Features • Suitable For Developing Custom Supplies • Up to 96.5 Efficient • Compact Full Brick Package (116.8 x 61 x 12.7mm) • Up to 100°C Rated Baseplate Temperature • Conduction Cooled Via Baseplate Benefits • Module Solution Reduces Risk, Time and Cost • Less Waste Heat to Manage and

文件：1.32924 Mbytes 页数：5 Pages

TDK

东电化

1008 to 1512W Power Factor Correction Module

Features • Suitable For Developing Custom Supplies • Up to 96.5 Efficient • Compact Full Brick Package (116.8 x 61 x 12.7mm) • Up to 100°C Rated Baseplate Temperature • Conduction Cooled Via Baseplate Benefits • Module Solution Reduces Risk, Time and Cost • Less Waste Heat to Manage and

文件：1.32924 Mbytes 页数：5 Pages

TDK

东电化

1008 to 1512W Power Factor Correction Module

Features • Suitable For Developing Custom Supplies • Up to 96.5 Efficient • Compact Full Brick Package (116.8 x 61 x 12.7mm) • Up to 100°C Rated Baseplate Temperature • Conduction Cooled Via Baseplate Benefits • Module Solution Reduces Risk, Time and Cost • Less Waste Heat to Manage and

文件：1.32924 Mbytes 页数：5 Pages

TDK

东电化

Silicon N Channel MOSFET Series Power Switching

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over

文件：92.92 Kbytes 页数：9 Pages

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瑞萨

Silicon N Channel MOS FET Series Power Switching

Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over pow

文件：54.85 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOSFET Series Power Switching

Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over

文件：92.92 Kbytes 页数：9 Pages

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