HAF1009

Silicon P Channel MOS FET Series Power Switching

Description ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

HAF1009L

Silicon P Channel MOS FET Series Power Switching

Description ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

HAF1009S

Silicon P Channel MOS FET Series Power Switching

Description ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

HAF1009_15

Silicon P Channel MOS FET Series Power Switching

HCX-D1009

For11.1V3SLi-ion/Li-PolymerBatteryPacks

HPR1009

1.0WATTUNREGULATEDSIPDC/DCCONVERTER

DESCRIPTION TheHPR10XXSeriesusesadvancedcircuitdesignandpackagingtechnologytodeliversuperiorreliabilityandperformance.A170kHzpush-pulloscillatorisusedintheinputstage.Beat-frequencyoscillationproblemsarereducedwhenusingtheHPR10XXSerieswithhighfrequencyisola

HPR1009

1.0WATTUNREGULATEDSIPDC/DCCONVERTER

DESCRIPTION TheHPR10XXSeriesusesadvancedcircuitdesignandpackagingtechnologytodeliversuperiorreliabilityandperformance.A170kHzpush-pulloscillatorisusedintheinputstage.Beat-frequencyoscillationproblemsarereducedwhenusingtheHPR10XXSerieswithhighfrequencyisola

HPR1009C

1.0WATTUNREGULATED,SIPDC/DCCONVERTER

DESCRIPTION TheHPR10XXCSeriesusesadvancedcircuitdesignandpackagingtechnologytodeliversuperiorreliabilityandperformance.A170kHzpush-pulloscillatorisusedintheinputstage.Beat-frequencyoscillationproblemsarereducedwhenusingtheHPR10XXCSerieswithhighfrequencyiso

IPT-1009

ICReferenceDesignTransformers

IS-1009EH

RadiationHardened2.5VReference

Features •ElectricallyscreenedtoSMD#5962-00523 •QMLqualifiedperMIL-PRF-38535requirements •EHversionacceptancetestedto50krad(Si)(LDR) •Radiationenvironment-IS-1009EH -Highdoserate(50-300rad(Si)/s)...........300krad(Si) -Lowdoserate(0.01rad(Si)/s)...