Silicon P Channel MOS FET Series Power Switching

Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over

文件：113.11 Kbytes 页数：10 Pages

RENESAS

瑞萨

Silicon P Channel MOS FET Series Power Switching

Description\nThis FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over pow •  Logic level operation (-4 to -6 V Gate drive)\n•  High endurance capability against to the short circuit\n•  Built–in the over temperature shut–down circuit\n•  Latch type shut–down operation (Need 0 voltage recovery);

Renesas

瑞萨

Silicon P Channel MOS FET Series Power Switching

Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over

文件：113.11 Kbytes 页数：10 Pages

RENESAS

瑞萨

Silicon P Channel MOS FET Series Power Switching

Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over

文件：113.11 Kbytes 页数：10 Pages

RENESAS

瑞萨

Silicon P Channel MOS FET Series Power Switching

文件：126.41 Kbytes 页数：12 Pages

RENESAS

瑞萨

Silicon P Channel MOS FET Series Power Switching

This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumptio • Logic level operation (-4 to -6 V Gate drive)\n• High endurance capability against to the short circuit\n• Built–in the over temperature shut–down circuit\n• Latch type shut–down operation (Need 0 voltage recovery);

Renesas

瑞萨

Intelligent Power Devices

Renesas

瑞萨