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HAF1009L

Silicon P Channel MOS FET Series Power Switching

Description ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HAF1009S

SiliconPChannelMOSFETSeriesPowerSwitching

Description ThisFEThastheovertemperatureshut–downcapabilitysensingtothejunctiontemperature.ThisFEThasthebuilt–inovertemperatureshut–downcircuitinthegatearea.Andthiscircuitoperationtoshut–downthegatevoltageincaseofhighjunctiontemperaturelikeapplyingover

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

HCX-D1009

For11.1V3SLi-ion/Li-PolymerBatteryPacks

BESTECHBesTech Power Co., Ltd

百思特百思特电源有限公司

HPR1009

1.0WATTUNREGULATEDSIPDC/DCCONVERTER

DESCRIPTION TheHPR10XXSeriesusesadvancedcircuitdesignandpackagingtechnologytodeliversuperiorreliabilityandperformance.A170kHzpush-pulloscillatorisusedintheinputstage.Beat-frequencyoscillationproblemsarereducedwhenusingtheHPR10XXSerieswithhighfrequencyisola

CANDD

C&D Technologies

HPR1009

1.0WATTUNREGULATEDSIPDC/DCCONVERTER

DESCRIPTION TheHPR10XXSeriesusesadvancedcircuitdesignandpackagingtechnologytodeliversuperiorreliabilityandperformance.A170kHzpush-pulloscillatorisusedintheinputstage.Beat-frequencyoscillationproblemsarereducedwhenusingtheHPR10XXSerieswithhighfrequencyisola

CANDD

C&D Technologies

HPR1009C

1.0WATTUNREGULATED,SIPDC/DCCONVERTER

DESCRIPTION TheHPR10XXCSeriesusesadvancedcircuitdesignandpackagingtechnologytodeliversuperiorreliabilityandperformance.A170kHzpush-pulloscillatorisusedintheinputstage.Beat-frequencyoscillationproblemsarereducedwhenusingtheHPR10XXCSerieswithhighfrequencyiso

MURATA-PSMurata Power Solutions Inc.

村田村田制作所

IPT-1009

ICReferenceDesignTransformers

ICE

ice Components, Ins.

IS-1009EH

RadiationHardened2.5VReference

Features •ElectricallyscreenedtoSMD#5962-00523 •QMLqualifiedperMIL-PRF-38535requirements •EHversionacceptancetestedto50krad(Si)(LDR) •Radiationenvironment-IS-1009EH -Highdoserate(50-300rad(Si)/s)...........300krad(Si) -Lowdoserate(0.01rad(Si)/s)...

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

IS-1009RH

RadiationHardened2.5VReference

Intersil

Intersil Corporation

IS-1009RH

RadiationHardened2.5VReference

Intersil

Intersil Corporation

详细参数

  • 型号:

    HAF1009L

  • 制造商:

    RENESAS

  • 制造商全称:

    Renesas Technology Corp

  • 功能描述:

    Silicon P Channel MOS FET Series Power Switching

供应商型号品牌批号封装库存备注价格
RENESAS/瑞萨
22+
TO-263
6000
十年配单,只做原装
询价
RENESAS/瑞萨
23+
TO-263
6000
原装正品,支持实单
询价
RENESAS/瑞萨
23+
TO-263
8400
专注配单,只做原装进口现货
询价
RENESAS/瑞萨
23+
TO-263
8400
专注配单,只做原装进口现货
询价
RENESAS
25+
TO-263
37650
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
RENESAS/瑞萨
22+
SOT-263
100000
代理渠道/只做原装/可含税
询价
RENESAS
23+
SOP-8
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
RENESAS
23+
SOP8
5000
原装正品,假一罚十
询价
RENESAN
21+
12588
SOP8
询价
RENESAS/瑞萨
2447
SOP-8
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
更多HAF1009L供应商 更新时间2025-7-23 14:02:00