Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance: RDS (on)= 0.38 Ωtyp. • Low leakage current: IDSS= 1 µA max (at VDS= 200 V) • High speed switching: tf= 10 ns typ (at VGS= 10 V, VDD= 100 V, ID= 4 A) • Low gate charge: Qg = 14 nC typ (at VDD= 160 V, VGS= 10 V, ID= 8 A) • Avalanche ratings

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance: RDS (on)= 0.38 Ωtyp. • Low leakage current: IDSS= 1 µA max (at VDS= 200 V) • High speed switching: tf= 10 ns typ (at VGS= 10 V, VDD= 100 V, ID= 4 A) • Low gate charge: Qg = 14 nC typ (at VDD= 160 V, VGS= 10 V, ID= 8 A) • Avalanche ratings

文件：91.9 Kbytes 页数：8 Pages

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance: RDS (on)= 0.38 Ωtyp. • Low leakage current: IDSS= 1 µA max (at VDS= 200 V) • High speed switching: tf= 10 ns typ (at VGS= 10 V, VDD= 100 V, ID= 4 A) • Low gate charge: Qg = 14 nC typ (at VDD= 160 V, VGS= 10 V, ID= 8 A) • Avalanche ratings

文件：91.9 Kbytes 页数：8 Pages

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N-Channel MOSFET uses advanced trench technology

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杜因特