H5N2004DL技术资料参数原装现货瑞萨RENESAS-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
H5N2004DL	文件：91.9 Kbytes Page：8 Pages	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance: RDS (on)= 0.38 Ωtyp. • Low leakage current: IDSS= 1 µA max (at VDS= 200 V) • High speed switching: tf= 10 ns typ (at VGS= 10 V, VDD= 100 V, ID= 4 A) • Low gate charge: Qg = 14 nC typ (at VDD= 160 V, VGS= 10 V, ID= 8 A) • Avalanche ratings 文件：91.9 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
H5N2004DL-E	文件：91.9 Kbytes Page：8 Pages	Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance: RDS (on)= 0.38 Ωtyp. • Low leakage current: IDSS= 1 µA max (at VDS= 200 V) • High speed switching: tf= 10 ns typ (at VGS= 10 V, VDD= 100 V, ID= 4 A) • Low gate charge: Qg = 14 nC typ (at VDD= 160 V, VGS= 10 V, ID= 8 A) • Avalanche ratings 文件：91.9 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
H5N2004DL_15	文件：110.89 Kbytes Page：10 Pages	Silicon N Channel MOS FET High Speed Power Switching 文件：110.89 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
H5N2004DL	文件：300 bytes Page：1 Pages	Power MOSFETs	Renesas 瑞萨	Renesas

更多H5N2004DL供应商更新时间2025-11-30 11:04:00