Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance: R DS (on) = 0.053 Ω typ. • Low leakage current: IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V) • High speed switching: tf = 110 ns typ (at ID = 15 A, RL = 8.3 Ω, VGS = 10 V) • Low gate charge: Qg = 110 nC typ (at VDD = 200 V, VGS = 10 V, ID = 30 A) • Avalanche ratin

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Power MOSFETs and IGBT for PDP

文件：136.18 Kbytes 页数：2 Pages

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Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance: R DS (on) = 0.053 Ω typ. • Low leakage current: IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V) • High speed switching: tf = 110 ns typ (at ID = 15 A, RL = 8.3 Ω, VGS = 10 V) • Low gate charge: Qg = 110 nC typ (at VDD = 200 V, VGS = 10 V, ID = 30 A) • Avalanche ratin

文件：87.25 Kbytes 页数：7 Pages

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SILICON N CHANNEL MOSFET SWITCHING

SILICON N CHANNEL MOSFET SWITCHING)

文件：263.05 Kbytes 页数：11 Pages

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