晶体管输出光电耦合器 PTR 30%, 5KV

Lite-On Opto

光宝科技

Property of Lite-On Only

FEATURES * Current transfer ratio ( CTR : MIN. 20 at IF = 10mA, VCE = 10V ) * High isolation voleage between input and output ( Viso = 5,000 Vrms ) * Very High collector-emitter breakdown voltage ( BVCER = 300V) * Dual-in-line package : H11D1 : 1-channel type

文件：196.8 Kbytes 页数：9 Pages

LITEON

光宝科技

晶体管输出光电耦合器 PTR 30%, 5KV

Lite-On Opto

光宝科技

6-Pin DIP High Voltage Phototransistor Optocouplers

Description The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor−type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six−pin dual−in−line package. Fea

文件：339.94 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

6-Pin DIP High Voltage Phototransistor Optocouplers

Description The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor−type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six−pin dual−in−line package. Fea

文件：339.94 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

6-Pin DIP High Voltage Phototransistor Optocouplers

Description The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor−type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six−pin dual−in−line package. Fea

文件：339.94 Kbytes 页数：10 Pages

ONSEMI

安森美半导体