H11D1TVM中文资料安森美半导体数据手册PDF规格书

Description

The 4N38M, H11D1M, H11D3M and MOC8204M are

phototransistor−type optically coupled optoisolators. A gallium

arsenide infrared emitting diode is coupled with a high voltage NPN

silicon phototransistor. The device is supplied in a standard plastic

six−pin dual−in−line package.

Features

• High Voltage:

♦ MOC8204M, BVCEO = 400 V

♦ H11D1M, BVCEO = 300 V

♦ H11D3M, BVCEO = 200 V

• Safety and Regulatory Approvals:

♦ UL1577, 4,170 VACRMS for 1 Minute

• DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage

Applications

• Power Supply Regulators

• Digital Logic Inputs

• Microprocessor Inputs

• Appliance Sensor Systems

• Industrial Controls