Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l

文件：245.3 Kbytes 页数：10 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l

文件：2.07738 Mbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

H11F1M, H11F2M, H11F3M Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low l

文件：2.07738 Mbytes 页数：11 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Photo FET Optocouplers

General Description The H11FXM series consists of a Gallium−Aluminum−Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo−detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion−free control of low

文件：338.65 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

6 引脚 DIP 双向模拟 FET 输出光耦合器

H11FXM系列包含一个砷铝化镓IRED发光二极管，该二极管光学耦合至对称双向硅光电探测器。 探测器与输入端绝缘，功能类似于理想的隔离式FET，设计用于低电平AC和DC模拟信号的无失真控制。 H11FXM系列器件采用双列直插封装。 • 作为一个远程可变电阻：\n• ≤ 100Ω至≥ 300MΩ\n• ≤ 15pF分流电容\n• ≥ 100GΩ I/O隔离电阻作为模拟开关：\n• 极低失调电压\n• 60 Vpk-pk信号能力\n• 无电荷注入或闩锁\n• UL认证（文件编号E90700）;

ONSEMI

安森美半导体

Package：6-DIP（0.300"，7.62mm）；包装：管件 类别：隔离器 光隔离器 - 晶体管，光电输出 描述：OPTOISOLTR 7.5KV PHOTO FET 6-DIP

ONSEMI

安森美半导体