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型号	下载订购	功能描述	制造商上传企业	LOGO
H11D1M	文件：339.94 Kbytes Page：10 Pages	6-Pin DIP High Voltage Phototransistor Optocouplers Description The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor−type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six−pin dual−in−line package. Fea 文件：339.94 Kbytes 页数：10 Pages	ONSEMI 安森美半导体	ONSEMI
H11D1M	文件：196.8 Kbytes Page：9 Pages	Property of Lite-On Only FEATURES * Current transfer ratio ( CTR : MIN. 20 at IF = 10mA, VCE = 10V ) * High isolation voleage between input and output ( Viso = 5,000 Vrms ) * Very High collector-emitter breakdown voltage ( BVCER = 300V) * Dual-in-line package : H11D1 : 1-channel type 文件：196.8 Kbytes 页数：9 Pages	LITEON 光宝科技	LITEON
H11D1M/2M	文件：249.16 Kbytes Page：9 Pages	High Voltage Phototransistor Optocouplers General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea 文件：249.16 Kbytes 页数：9 Pages	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
H11D1MSLASH2M	文件：249.16 Kbytes Page：9 Pages	High Voltage Phototransistor Optocouplers General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea 文件：249.16 Kbytes 页数：9 Pages	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
H11D1S	文件：382.03 Kbytes Page：8 Pages	HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua 文件：382.03 Kbytes 页数：8 Pages	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
H11D1S	文件：196.8 Kbytes Page：9 Pages	Property of Lite-On Only FEATURES * Current transfer ratio ( CTR : MIN. 20 at IF = 10mA, VCE = 10V ) * High isolation voleage between input and output ( Viso = 5,000 Vrms ) * Very High collector-emitter breakdown voltage ( BVCER = 300V) * Dual-in-line package : H11D1 : 1-channel type 文件：196.8 Kbytes 页数：9 Pages	LITEON 光宝科技	LITEON
H11D1SD	文件：382.03 Kbytes Page：8 Pages	HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua 文件：382.03 Kbytes 页数：8 Pages	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
H11D1SM	文件：249.16 Kbytes Page：9 Pages	High Voltage Phototransistor Optocouplers General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea 文件：249.16 Kbytes 页数：9 Pages	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
H11D1SM	文件：339.94 Kbytes Page：10 Pages	6-Pin DIP High Voltage Phototransistor Optocouplers Description The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor−type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six−pin dual−in−line package. Fea 文件：339.94 Kbytes 页数：10 Pages	ONSEMI 安森美半导体	ONSEMI
H11D1SR2M	文件：249.16 Kbytes Page：9 Pages	High Voltage Phototransistor Optocouplers General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea 文件：249.16 Kbytes 页数：9 Pages	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild

技术参数

Pb-free：
Pb
Status：
Active
Channels：
1
CTR (Min) (%)：
20
CTR tested @ IF (mA)：
10
VCE(sat) (Max) (V)：
0.4
BVCEO (Min) (V)：
300
BVCBO (Min) (V)：
300
BVECO (Min) (V)：
7
ton (Max) (µs)：
5
toff (Max) (µs)：
5
VISO (Min) (V)：
4200
TOPR (Min) (°C)：
-40
TOPR (Max) (°C)：
100
Package Type：
PDIP-6

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	H11D1	ONSEMI/安森美	25+	DIP6	32360	ONSEMI/安森美全新特价H11D1即刻询购立享优惠#长期有货	询价
深圳市龙瀚电子有限公司	H11D1	FAIRCHILD	13+	DIP	62000	原装正品现货优势18	询价
深圳市星佑电子有限公司	H11D1	M	05+	原厂原装	4288	只做全新原装真实现货供应	询价
深圳市福田区绿盛电子商行	H11D1	MOT/QTC	2015+	SOP/DIP	19889	一级代理原装现货,特价热卖!	询价
深圳市锦达世纪科技有限公司	H11D1	INF	04+	DIP-6	2000		询价
深圳市一线半导体有限公司	H11D1	MOT或QTC	24+	DIP或SMD	10000	现货	询价
深圳市富诚威科技有限公司	H11D1	MOT	25+	DIP-6	2560	绝对原装!现货热卖!	询价
深圳市毅创腾电子科技有限公司	H11D1	MOTOROLA		DIP6	2548	正品原装--自家现货-实单可谈	询价
深圳市勤思达科技有限公司	H11D1	INF	10+	DIP-6	7800	全新原装正品,现货销售	询价
深圳市弘为电子有限公司	H11D1	MOT	24+	DIP/6	1068	原装现货假一罚十	询价

更多H11D1供应商更新时间2025-10-5 14:14:00

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