HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS

DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua

文件：382.03 Kbytes 页数：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Optocoupler, Phototransistor Output, With Base Connection, High BVCEO Voltage

DESCRIPTION The H11Dx has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-6 package. It features a high current transfer ratio, low coupling capacitance, and high isolation voltage. The coup

文件：196.48 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世科技

Optocoupler, Phototransistor Output, With Base Connection, High BVCEO Voltage

FEATURES • Very high collector emitter breakdown voltage BVCEO = 300 V • Isolation test voltage: 5000 VRMS • Low coupling capacitance • High common mode transient immunity • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 AGENCY APPROVALS •

文件：196.19 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世科技

HIGH VOLTAGE OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT

DESCRIPTION The H11D series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES Options :- 10mm lead spread - add G after part no. Surface mount - add SM after part

文件：78.54 Kbytes 页数：3 Pages

ISOCOM

英国安数光

Property of Lite-On Only

FEATURES * Current transfer ratio ( CTR : MIN. 20 at IF = 10mA, VCE = 10V ) * High isolation voleage between input and output ( Viso = 5,000 Vrms ) * Very High collector-emitter breakdown voltage ( BVCER = 300V) * Dual-in-line package : H11D1 : 1-channel type

文件：196.8 Kbytes 页数：9 Pages

LITEON

光宝科技

6-Pin DIP Optoisolators High Voltage Transistor Output(300 Volts)

The H11D1 and H11D2 consist of gallium arsenide infrared emitting diodes optically coupled to high voltage, silicon, phototransistor detectors in a standard 6–pin DIP package. They are designed for high voltage applications and are particularly useful in copy machines and solid state relays.

文件：282.85 Kbytes 页数：6 Pages

Motorola

摩托罗拉

Optocoupler, Phototransistor Output, With Base Connection, High BVCER Voltage

文件：120.43 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Optocoupler, Phototransistor Output, With Base Connection, High BVCEO Voltage

Very high collector emitter breakdown voltage BVCEO = 300 V\nIsolation test voltage: 5000 VRMS\nLow coupling capacitance;

Vishay

威世科技

6-Pin DIP Optoisolators High Voltage Transistor Output(300 Volts)

恩XP

恩智浦

H11D1 Transistor Detector 6 Pin, Single

ISOCOM

英国安数光