H11D1MSLASH2M中文资料仙童半导体数据手册PDF规格书

General Description

The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.

特性 Features

■ High voltage:

– MOC8204M, BVCER = 400V

– H11D1M, H11D2M, BVCER = 300V

– H11D3M, BVCER = 200V

■ High isolation voltage:

– 7500 VAC peak, 1 second

■ Underwriters Laboratory (UL) recognized File # E90700, Volume 2

■ IEC 60747-5-2 approved (ordering option V)

Applications

■ Power supply regulators

■ Digital logic inputs

■ Microprocessor inputs

■ Appliance sensor systems

■ Industrial controls