High Voltage Phototransistor Optocouplers

General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea

文件：228.9 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

High Voltage Phototransistor Optocouplers

General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea

文件：249.16 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

High Voltage Phototransistor Optocouplers

General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea

文件：249.16 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

High Voltage Phototransistor Optocouplers

General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea

文件：249.16 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

6-Pin DIP High Voltage Phototransistor Optocouplers

Description The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor−type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six−pin dual−in−line package. Fea

文件：339.94 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Property of Lite-On Only

FEATURES * Current transfer ratio ( CTR : MIN. 20 at IF = 10mA, VCE = 10V ) * High isolation voleage between input and output ( Viso = 5,000 Vrms ) * Very High collector-emitter breakdown voltage ( BVCER = 300V) * Dual-in-line package : H11D1 : 1-channel type

文件：196.8 Kbytes 页数：9 Pages

LITEON

光宝科技

High Voltage Phototransistor Optocouplers

General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea

文件：249.16 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

High Voltage Phototransistor Optocouplers

General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea

文件：249.16 Kbytes 页数：9 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

6引脚DIP高BVceo光电晶体管输出光电耦合器

4N38M、H11D1M、H11D3M 和 MOC8204M 都是耦合至光隔离器的光电晶体管类型。 一个砷化镓红外发光二极管与一个高压NPN硅光电二极管耦合。 该器件提供标准塑封6引脚双列直插封装。 • 高电压：\n• MOC8204M, BVCEO= 400 V\n• H11D1M, BVCEO= 300 V\n• H11D3M, BVCEO= 200 V\n• 安全和法规认证：\n• UL1577，4170 VACRMS（1 分钟）\n• DIN-EN/IEC60747-5-5，850 V 峰值工作绝缘电压;

ONSEMI

安森美半导体