型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua 文件:382.03 Kbytes 页数:8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
Optocoupler, Phototransistor Output, With Base Connection, High BVCEO Voltage DESCRIPTION The H11Dx has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-6 package. It features a high current transfer ratio, low coupling capacitance, and high isolation voltage. The coup 文件:196.48 Kbytes 页数:10 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua 文件:382.03 Kbytes 页数:8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua 文件:382.03 Kbytes 页数:8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua 文件:382.03 Kbytes 页数:8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua 文件:382.03 Kbytes 页数:8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
High Voltage Phototransistor Optocouplers General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea 文件:228.9 Kbytes 页数:9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
High Voltage Phototransistor Optocouplers General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea 文件:249.16 Kbytes 页数:9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
High Voltage Phototransistor Optocouplers General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea 文件:249.16 Kbytes 页数:9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
High Voltage Phototransistor Optocouplers General Description The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package. Fea 文件:249.16 Kbytes 页数:9 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
技术参数
- Pb-free:
Pb
- Status:
Active
- Channels:
1
- CTR (Min) (%):
20
- CTR tested @ IF (mA):
10
- VCE(sat) (Max) (V):
0.4
- BVCEO (Min) (V):
300
- BVCBO (Min) (V):
300
- BVECO (Min) (V):
7
- ton (Max) (µs):
5
- toff (Max) (µs):
5
- VISO (Min) (V):
4200
- TOPR (Min) (°C):
-40
- TOPR (Max) (°C):
100
- Package Type:
PDIP-6
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ONSEMI/安森美 |
25+ |
DIP6 |
32360 |
ONSEMI/安森美全新特价H11D1即刻询购立享优惠#长期有货 |
询价 | ||
FAIRCHILD |
13+ |
DIP |
62000 |
原装正品现货优势18 |
询价 | ||
M |
05+ |
原厂原装 |
4288 |
只做全新原装真实现货供应 |
询价 | ||
MOT/QTC |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
INF |
04+ |
DIP-6 |
2000 |
询价 | |||
MOT或QTC |
24+ |
DIP或SMD |
10000 |
现货 |
询价 | ||
MOT |
25+ |
DIP-6 |
2560 |
绝对原装!现货热卖! |
询价 | ||
MOTOROLA |
DIP6 |
2548 |
正品原装--自家现货-实单可谈 |
询价 | |||
INF |
10+ |
DIP-6 |
7800 |
全新原装正品,现货销售 |
询价 | ||
MOT |
24+ |
DIP/6 |
1068 |
原装现货假一罚十 |
询价 |
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