H11D1_V02中文资料威世数据手册PDF规格书

DESCRIPTION

The H11Dx has a GaAs infrared emitting diode emitter,

which is optically coupled to a silicon planar phototransistor

detector, and is incorporated in a plastic DIP-6 package.

It features a high current transfer ratio, low coupling

capacitance, and high isolation voltage.

The coupling device is designed for signal transmission

between two electrically separated circuits.

FEATURES

• Very high collector emitter breakdown voltage

BVCEO = 300 V

• Isolation test voltage: 5000 VRMS

• Low coupling capacitance

• High common mode transient immunity

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912