GTVA355001中文资料High Power RF GaN on SiC HEMT500 W, 50 V, 2.9 to 3.5 GHz数据手册MACOM规格书

描述 Description

The GTVA355001EC is a 500-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2.9 to 3.5 GHz frequency band. It features input and output matching, high efficiency, and a thermally-enhanced package.

特性 Features

• GaN on SiC HEMT technology
• Broadband internal input and output matching
• Typical pulsed CW performance, single side, 3500 MHz, 50 V, 300 μs pulse width, 10% duty cycle
• Output power at P3dB = 500 W
• Drain efficiency = 65%
• Gain = 13 dB
• Pb-free and RoHS compliant