GTVA107001FC-V1数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

Input matchedTypical pulsed CW performance (class AB); 1030 MHz; 50 V; 128 μs pulse width; 10% duty cycle; Output power P3dB = 890 W; Drain efficiency = 75%; Gain = 18 dBCapable of withstanding a 10:1 load mismatch (all phase angles at 700 W peak power under pulse conditions: 50 V; 100 mA IDQ;128 μs pulse width; 10% duty cycle Human Body Model Class IC (per ANSI/ESDA/JEDEC JS-001) Pb-free and RoHS-compliant

特性 Features

• Input matched
•Typical pulsed CW performance (class AB); 1030 MHz; 50 V; 128 μs pulse width; 10% duty cycle; Output power P3dB = 890 W; Drain efficiency = 75%; Gain = 18 dB
•Capable of withstanding a 10:1 load mismatch (all phase angles at 700 W peak power under pulse conditions: 50 V; 100 mA IDQ;128 μs pulse width; 10% duty cycle
•Human Body Model Class IC (per ANSI/ESDA/JEDEC JS-001)
•Pb-free and RoHS-compliant

应用 Application

• Radar Amplifiers