GTVA212701FA-V2中文资料High Power RF GaN-on-SiC HEMT 270 W, 48 V, 2110 - 2200 MHz数据手册MACOM规格书

描述 Description

The GTVA212701FA is a 270-watt GaN-on-SiC high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequency band. It features input matching; high efficiency; and a thermally-enhanced earless package.

特性 Features

·Typical Pulsed CW performance; 2180 MHz; 48 V; 10% duty cycle
·Output power P3dB 300 W
·Efficiency 68.5%
·Gain 17.5 dB
·Capable of handling 10:1 VSWR @ 48 V; 56.2 W (WCDMA) output power
·Pb-free and RoHS compliant
·Input matched

应用 Application

·Multi-standard Cellular Power Amplifiers