High Power RF GaN-on-SiC HEMT 270 W, 48 V, 2110 - 2200 MHz

The GTVA212701FA is a 270-watt GaN-on-SiC high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequency band. It features input matching; high efficiency; and a thermally-enhanced earless package. ·Typical Pulsed CW performance; 2180 MHz; 48 V; 10% duty cycle\n·Output power P3dB 300 W\n·Efficiency 68.5%\n·Gain 17.5 dB\n·Capable of handling 10:1 VSWR @ 48 V; 56.2 W (WCDMA) output power\n·Pb-free and RoHS compliant\n·Input matched;

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Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz

Description The GTVA212701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequecy band. It features input matching, high efficiency, and a thermally-enhanced earless package. Features • GaN on SiC HEMT technology • Input matched • Typic

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Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz

Description The GTVA212701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in the 2110 to 2200 MHz frequecy band. It features input matching, high efficiency, and a thermally-enhanced earless package. Features • GaN on SiC HEMT technology • Input matched • Typic

文件：566.2 Kbytes 页数：8 Pages

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Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 ??2200 MHz

文件：434 Kbytes 页数：8 Pages

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Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 ??2200 MHz

文件：434 Kbytes 页数：8 Pages

Cree

科锐

Package：H-87265J-2；包装：带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：270W, GAN HEMT, 48V, 2110-2200MH

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Package：H-87265J-2；包装：带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：270W, GAN HEMT, 48V, 2110-2200MH

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