GTVA126001EC-V1数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

Input matched Typical pulsed CW performance (class AB); 1200 MHz; 50 V; 300 μs pulse width; 10% duty cycle; Output power (P3dB) = 600 W; Drain efficiency = 65%; Gain = 18 dB Capable of withstanding a 10:1 load mismatch (all phase angles) at 600 W peak power under pulsed conditions: 300 μs pulse width; 10% duty cycle; VDD = 50 V; IDQ = 100 mA Human Body Model Class 1C (per AnSI/ESDA/JEDEC JS-001) Pb-free and RoHS compliant

特性 Features

• Input matched
•Typical pulsed CW performance (class AB); 1200 MHz; 50 V; 300 μs pulse width; 10% duty cycle; Output power (P3dB) = 600 W; Drain efficiency = 65%; Gain = 18 dB
•Capable of withstanding a 10:1 load mismatch (all phase angles) at 600 W peak power under pulsed conditions: 300 μs pulse width; 10% duty cycle; VDD = 50 V; IDQ = 100 mA
•Human Body Model Class 1C (per AnSI/ESDA/JEDEC JS-001)
•Pb-free and RoHS compliant

应用 Application

• Radar Amplifiers