Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz

Input matched Typical pulsed CW performance (class AB); 1200 MHz; 50 V; 300 μs pulse width; 10% duty cycle; Output power (P3dB) = 600 W; Drain efficiency = 65%; Gain = 18 dB Capable of withstanding a 10:1 load mismatch (all phase angles) at 600 W peak power under pulsed conditions: 300 μs pu • Input matched\n•Typical pulsed CW performance (class AB); 1200 MHz; 50 V; 300 μs pulse width; 10% duty cycle; Output power (P3dB) = 600 W; Drain efficiency = 65%; Gain = 18 dB\n•Capable of withstanding a 10:1 load mismatch (all phase angles) at 600 W peak power under pulsed conditions: 300;

MACOM

Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz

Description The GTVA126001EC and GTVA126001FC are 600-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy band. They feature input matching, high efficiency, and thermallyenhanced packages. Features • GaN on SiC HEMT technology • Input matched • Ty

文件：443.12 Kbytes 页数：8 Pages

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Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz

Description The GTVA126001EC and GTVA126001FC are 600-watt GaN on SiC high electron mobility transistors (HEMT) for use in the DC - 1.4 GHz frequecy band. They feature input matching, high efficiency, and thermallyenhanced packages. Features • GaN on SiC HEMT technology • Input matched • Ty

文件：443.12 Kbytes 页数：8 Pages

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射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT 50V 1.2-1.4GHz 600W

Wolfspeed(CREE)

Package：SOT-957A；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：600W GAN HEMT 50V 1.2-1.4GHZ FET

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