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GTVA220701FA中文资料High Power RF GaN-on-SiC HEMT 70 W, 50 V, 1805 - 2170 MHz数据手册MACOM规格书
GTVA220701FA规格书详情
描述 Description
The GTVA220701FA is a 70-watt (P3dB) GaN-on-SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
特性 Features
·Typical Pulsed CW performance; 1880 MHz; 48 V
·Output power P3dB 45 W
·Efficiency 60.7%
·Gain 21.6 dB
·Capable of handling 10:1 VSWR @ 48 V; 40 W (CW) output power
·RoHS compliant
·Input matched
应用 Application
·Multi-standard Cellular Power Amplifiers
技术参数
- 制造商编号
：GTVA220701FA
- 生产厂家
：MACOM
- Min Frequency (MHz)
：1800
- Max Frequency(MHz)
：2200
- P3dB Output Power(W)
：45
- Gain(dB)
：19.0
- Efficiency(%)
：27
- Operating Voltage(V)
：50
- Package Category
：Earless
- Form
：Packaged Discrete Transistor
- Technology
：GaN-on-SiC
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
询价 | ||
Cree/Wolfspeed |
2022+ |
H-37265J-2 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
INFINEON |
23+ |
IC |
8000 |
只做原装现货 |
询价 | ||
INFINEON |
23+ |
IC |
7000 |
询价 | |||
MACOM |
24+ |
5000 |
原装军类可排单 |
询价 | |||
ST |
2405+ |
原厂封装 |
50000 |
15年芯片行业经验/只供原装正品:0755-83271743邹小姐 |
询价 | ||
INFINEON/英飞凌 |
24+ |
244 |
现货供应 |
询价 | |||
24+ |
N/A |
47000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
INFINEON/英飞凌 |
23+ |
1688 |
房间现货库存:QQ:373621633 |
询价 | |||
Infineon Technologies |
22+ |
9000 |
原厂渠道,现货配单 |
询价 |
