GTVA263202FCV1数据手册Infineon中文资料规格书

描述 Description

High Power RF GaN HEMT, 340 W, 48 V, 2620 – 2690 MHz

特性 Features

·GaN HEMT technology
·Input matched
·Typical Pulsed CW performance, 2690 MHz, 48 V, combined outputs - Output power at P 3dB = 340 W  - Efficiency = 70% - Gain = 16 dB
·Capable of handling 10:1 VSWR @ 48 V, 340 W (CW) output power
·Integrated ESD protection
·Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001)
·Low thermall resistance
·Pb-free and RoHS compliant