GTVA220701FAV1R0数据手册Infineon中文资料规格书

描述 Description

High Power RF GaN-SiC HEMT, 70 W, 50 V, 1805 – 2170 MHz

特性 Features

·Input matched
·Typical CW performance, 1880 MHz, 48 V
·Output power at P 3dB = 45 W
·Efficiency = 60.7%
·Gain = 21.6 dB

·Human Body Model, Class 1B (per ANSI/ESDA/JEDEC JS-001)
·Capable of handling 10:1 VSWR @ 48 V, 70 W (CW) output power
·RoHS-compliant