Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz

Description The GTRA364002FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficency, and a thermally-enhanced package with earless flange. Features • GaN on

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Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz

Description The GTRA364002FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficency, and a thermally-enhanced package with earless flange. Features • GaN on

文件：511.07 Kbytes 页数：8 Pages

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Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 – 3700 MHz

Description The GTRA374902FC is a 450-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on SiC HEM

文件：459.78 Kbytes 页数：8 Pages

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Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 – 3700 MHz

Description The GTRA374902FC is a 450-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on SiC HEM

文件：459.78 Kbytes 页数：8 Pages

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Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3600 – 3700 MHz

Description The GTRA374902FC is a 450-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on SiC HEM

文件：459.78 Kbytes 页数：8 Pages

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Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 – 3800 MHz

Description The GTRA384802FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input and output matching, high efficiency, and a thermally-enhanced package with earless flange. Features • Ga

文件：585.19 Kbytes 页数：9 Pages

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Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 – 3800 MHz

Description The GTRA384802FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input and output matching, high efficiency, and a thermally-enhanced package with earless flange. Features • Ga

文件：585.19 Kbytes 页数：9 Pages

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Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 – 3800 MHz

Description The GTRA384802FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input and output matching, high efficiency, and a thermally-enhanced package with earless flange. Features • Ga

文件：585.19 Kbytes 页数：9 Pages

WOLFSPEED

Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 – 3800 MHz

Description The GTRA384802FC is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input and output matching, high efficiency, and a thermally-enhanced package with earless flange. Features • Ga

文件：585.19 Kbytes 页数：9 Pages

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Thermally-Enhanced High Power RF GaN on SiC HEMT 235 W, 48 V, 3700 – 4100 MHz

Description The GTRA412852FC is a 235-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input and output matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN

文件：967.42 Kbytes 页数：14 Pages

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