GTRA412852FC

Thermally-Enhanced High Power RF GaN on SiC HEMT 235 W, 48 V, 3700 – 4100 MHz

Description TheGTRA412852FCisa235-watt(P3dB)GaNonSiChighelectron mobilitytransistor(HEMT)foruseinmulti-standardcellularpower amplifierapplications.Itfeaturesinputandoutputmatching,high efficiency,andathermally-enhancedpackagewithearlessflange. Features •GaN

GTRA412852FC-V1

High Power RF GaN-on-SiC HEMT 235 W, 48 V, 3700 - 4100 MHz; ·Input and output matched\n·Typical pulsed CW performance; 4100 MHz, 48 V, 10 µs pulse width, 100 µs PP·Output power at P3dB = 235 W\n·Gain = 10 dB\n·Efficiency = 45%\n·Capable of handling 10:1 VSWR @48 V, 30 W (WCDMA) output power\n·Human Body Model Class 1A (per ANSI/ESDA/JEDEC JS-001)\n·Low thermal resistance\n·Pb-free and RoHS compliant\n·GaN on SiC HEMT technology\n;

The GTRA412852FC is a 235-watt (P3dB) GaN-on-SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input and output matching, high efficiency, and a thermally-enhanced package with earless flange.\n\n

GTRA412852FC-V1-R0

Thermally-Enhanced High Power RF GaN on SiC HEMT 235 W, 48 V, 3700 – 4100 MHz

Description TheGTRA412852FCisa235-watt(P3dB)GaNonSiChighelectron mobilitytransistor(HEMT)foruseinmulti-standardcellularpower amplifierapplications.Itfeaturesinputandoutputmatching,high efficiency,andathermally-enhancedpackagewithearlessflange. Features •GaN

GTRA412852FC-V1-R2

Thermally-Enhanced High Power RF GaN on SiC HEMT 235 W, 48 V, 3700 – 4100 MHz

Description TheGTRA412852FCisa235-watt(P3dB)GaNonSiChighelectron mobilitytransistor(HEMT)foruseinmulti-standardcellularpower amplifierapplications.Itfeaturesinputandoutputmatching,high efficiency,andathermally-enhancedpackagewithearlessflange. Features •GaN