GTRA412852FC-V1数据手册MACOM中文资料规格书

描述 Description

The GTRA412852FC is a 235-watt (P3dB) GaN-on-SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input and output matching, high efficiency, and a thermally-enhanced package with earless flange.

特性 Features

·Input and output matched
·Typical pulsed CW performance; 4100 MHz, 48 V, 10 µs pulse width, 100 µs PP·Output power at P3dB = 235 W
·Gain = 10 dB
·Efficiency = 45%
·Capable of handling 10:1 VSWR @48 V, 30 W (WCDMA) output power
·Human Body Model Class 1A (per ANSI/ESDA/JEDEC JS-001)
·Low thermal resistance
·Pb-free and RoHS compliant
·GaN on SiC HEMT technology

应用 Application

·Cable Loss Compensation