High Power RF GaN-on-SiC HEMT 235 W, 48 V, 3700 - 4100 MHz

The GTRA412852FC is a 235-watt (P3dB) GaN-on-SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input and output matching, high efficiency, and a thermally-enhanced package with earless flange. ·Input and output matched\n·Typical pulsed CW performance; 4100 MHz, 48 V, 10 µs pulse width, 100 µs PP·Output power at P3dB = 235 W\n·Gain = 10 dB\n·Efficiency = 45%\n·Capable of handling 10:1 VSWR @48 V, 30 W (WCDMA) output power\n·Human Body Model Class 1A (per ANSI/ESDA/JEDEC JS-001)\n·Low t;

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Thermally-Enhanced High Power RF GaN on SiC HEMT 235 W, 48 V, 3700 – 4100 MHz

Description The GTRA412852FC is a 235-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input and output matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN

文件：967.42 Kbytes 页数：14 Pages

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Thermally-Enhanced High Power RF GaN on SiC HEMT 235 W, 48 V, 3700 – 4100 MHz

Description The GTRA412852FC is a 235-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input and output matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN

文件：967.42 Kbytes 页数：14 Pages

WOLFSPEED