GTRA384802FC-V1

Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 – 3800 MHz

Description TheGTRA384802FCisa400-watt(P3dB)GaNonSiChigh electronmobilitytransistor(HEMT)foruseinmulti-standard cellularpoweramplifierapplications.Itfeaturesinputand outputmatching,highefficiency,andathermally-enhanced packagewithearlessflange. Features •Ga

GTRA384802FC-V1

High Power RF GaN-on-SiC HEMT 400 W, 48 V, 3600 - 3800 MHz; ·Asymmetrical Doherty design: Main P3dB 200 W Typ, Peak P3dB 280 W Typ\n·Typical Pulsed CW performance; 3800 MHz, 48 V, combined outputs, 10% duty cycle\n·Output power 400 W\n·Efficiency 62%\n·Gain 13 dB\n·Capable of handling 10:1 VSWR @48 V, 63 W (WCDMA) output power\n·Pb-free and RoHS compliant\n·Input matched\n;

The GTRA384802FC is a 400-watt (P3dB) GaN-on-SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input and output matching, high efficiency, and a thermally-enhanced package with earless flange.\n\n

GTRA384802FC-V1-R0

Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 – 3800 MHz

Description TheGTRA384802FCisa400-watt(P3dB)GaNonSiChigh electronmobilitytransistor(HEMT)foruseinmulti-standard cellularpoweramplifierapplications.Itfeaturesinputand outputmatching,highefficiency,andathermally-enhanced packagewithearlessflange. Features •Ga

GTRA384802FC-V1-R2

Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 – 3800 MHz

Description TheGTRA384802FCisa400-watt(P3dB)GaNonSiChigh electronmobilitytransistor(HEMT)foruseinmulti-standard cellularpoweramplifierapplications.Itfeaturesinputand outputmatching,highefficiency,andathermally-enhanced packagewithearlessflange. Features •Ga

GTRA384802FC-V1-R0

Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 ??3800 MHz

GTRA384802FC-V1-R2

Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3600 ??3800 MHz