Ferrite Cores, Tiles, and Sheets

文件：3.22197 Mbytes 页数：12 Pages

KGS

丝印：GTR；Package：SOT26；SINGLE CHIP SOLUTION FOR 1-CELL Li BATTERY PACK

文件：742.23 Kbytes 页数：18 Pages

DIODES

美台半导体

Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz

Description The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on SiC HEMT

文件：693.96 Kbytes 页数：9 Pages

WOLFSPEED

Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz

Description The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on SiC HEMT

文件：693.96 Kbytes 页数：9 Pages

WOLFSPEED

Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz

Description The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on SiC HEMT

文件：693.96 Kbytes 页数：9 Pages

WOLFSPEED

Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz

Description The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on SiC HEMT

文件：693.96 Kbytes 页数：9 Pages

WOLFSPEED

Thermally-Enhanced High Power RF GaN on SiC HEMT 490 W, 48 V, 2110 – 2170 MHz

Description The GTRA214602FC is a 490-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermallyenhanced package with earless flange. Features • GaN on

文件：522.63 Kbytes 页数：8 Pages

WOLFSPEED

Thermally-Enhanced High Power RF GaN on SiC HEMT 490 W, 48 V, 2110 – 2170 MHz

Description The GTRA214602FC is a 490-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermallyenhanced package with earless flange. Features • GaN on

文件：522.63 Kbytes 页数：8 Pages

WOLFSPEED

Thermally-Enhanced High Power RF GaN on SiC HEMT 490 W, 48 V, 2110 – 2170 MHz

Description The GTRA214602FC is a 490-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermallyenhanced package with earless flange. Features • GaN on

文件：522.63 Kbytes 页数：8 Pages

WOLFSPEED

Thermally-Enhanced High Power RF GaN on SiC HEMT 490 W, 48 V, 2110 – 2170 MHz

Description The GTRA214602FC is a 490-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermallyenhanced package with earless flange. Features • GaN on

文件：522.63 Kbytes 页数：8 Pages

WOLFSPEED