Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz

Description The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on SiC HEMT

文件：693.96 Kbytes 页数：9 Pages

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High Power RF GaN on SiC HEMT, 460 W, 48 V, 1805 - 1880 MHz

The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching; high efficiency; and a thermallyenhanced package with earless flange. ·Input matched\n·Asymmetric Doherty design\nMain: P3dB = 170 W Typ\n·Peak: P3dB = 350 W Typ·Typical pulsed CW performance: 16 μs pulse width; 10% duty cycle; 2140 MHz; 48 V; Doherty fixture\nGain = 15 dB @ 49 dBm\n·Efficiency = 60% @ 49 dBm\n·Output power at P3dB = 490 W;

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Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz

Description The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on SiC HEMT

文件：693.96 Kbytes 页数：9 Pages

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Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz

Description The GTRA184602FC is a 460-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • GaN on SiC HEMT

文件：693.96 Kbytes 页数：9 Pages

WOLFSPEED