Thermally-Enhanced High Power RF GaN on SiC HEMT 490 W, 48 V, 2110 – 2170 MHz

Description The GTRA214602FC is a 490-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermallyenhanced package with earless flange. Features • GaN on

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Thermally-Enhanced High Power RF GaN on SiC HEMT 490 W, 48 V, 2110 – 2170 MHz

Description The GTRA214602FC is a 490-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermallyenhanced package with earless flange. Features • GaN on

文件：522.63 Kbytes 页数：8 Pages

WOLFSPEED

Thermally-Enhanced High Power RF GaN on SiC HEMT 490 W, 48 V, 2110 – 2170 MHz

Description The GTRA214602FC is a 490-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermallyenhanced package with earless flange. Features • GaN on

文件：522.63 Kbytes 页数：8 Pages

WOLFSPEED